Efficient circuit and method to measure resistance thresholds

A sense amplifier for an integrated circuit memory, comprising:

• a voltage divider network from a sense node to a supply voltage comprising a first device and a second device,
• wherein a sensing range of said sense amplifier is controlled by at least one of a resistance range of said second device and an adjust signal of said second device;
• a third device adapted to allow a drive signal to propagate to an output device when a gate signal connected to an experiment structure is off;
• and
• a fourth device and a fifth device, wherein said fourth device and said fifth device are adapted to latch said sense amplifier.

A sense line driver for an integrate circuit, comprising:

• a sense node adapted to receive an experiment signal from an experiment structure;
• an output device connected to said sense node, wherein said output device is adapted to amplify said experiment signal;
• and
• a voltage divider connected from said sense node to a supply voltage, to said sense node, wherein said voltage divider comprises a first device and a second device, and wherein a sensing range of said sense line driver is controlled by at least one of an operating width of said second device and an adjust signal of said second device.

A method of measuring resistance of an integrated circuit device using a sense line driver, comprising:

• forming a voltage divider network from a sense node to a supply voltage, comprising a first device and a second device;
• and
• controlling a sensing range of said sense line driver by at least one of an operating width of said second device and an adjust signal of said second device;
• propagating a drive signal to an output device when a gate signal connected to an experiment structure is off;
• and
• latching said sense line driver.