Methods for using sense lines to thermally control the state of an MRAM
AssigneeSamsung Electronics Co., Ltd.
InventorsJanice H. Nickel, Manuj Bhattacharyya, Robert G. Walmsley
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Abstract
A method of switching a magnetic orientation of at least one of a plurality of magnetic memory elements in a magnetic random access device can include coupling a sense line to the at least one of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and utilizing the sense line to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.
Claims10
A method of switching a magnetic orientation of at least one of a plurality of magnetic memory elements in a magnetic random access device comprising:
- coupling a sense line to the at least one of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via;
- and
- utilizing the sense line to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements, wherein utilizing the sense line to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements further comprising:
- coupling a current source to the sense line;
- and utilizing the sense line to heat at least one of the plurality of magnetic memory elements;
- and
- wherein utilizing the sense line to heat at least one of the plurality of magnetic memory elements further comprises:
- utilizing the current source to provide a current from the first via to the second via wherein the current heats at least one of the plurality of magnetic memory elements.
Dependencies are inferred from the claim text.