Phase change memory and method for driving the same

A method for operating a random access memory, wherein the random access memory includes a first electrode formed over a substrate, a patterned phase change material layer formed over the first electrode to contact the first electrode and including a conductive material, and a second electrode formed over the patterned phase change material layer to contact the patterned phase change material layer, the method comprising:

• forming a continuous conductive channel which extends essentially linearly from the first electrode to the second electrode through the patterned phase change material layer by applying a voltage to the first and second electrodes;
• eliminating the conductive channel by applying an inverse voltage to the first and second electrodes, wherein
• when forming the conductive channel, components of the phase change material converge thereby decreasing a resistance of the phase change material.