Semiconductor memory device with dual storage node and fabricating and operating methods thereof

An operating method of a semiconductor memory device, the semiconductor memory device including a substrate, a first transistor formed on the substrate, a first storage node connected to a source region of the first transistor, a second storage node connected to a drain region of the first transistor, and a plate line commonly contacting the first storage node and the second storage node, the operating method comprising:

• floating the drain region while maintaining the first transistor turned off;
• and
• generating a first electric potential difference between the source region of the first transistor and the plate line.