Power core devices

A device comprising a power core for a semiconductor device wherein said power core comprises:

• at least one embedded singulated capacitor layer containing more than one embedded singulated individual capacitor, each of said more than one embedded singulated individual capacitors comprising a capacitor formed on a metal foil, said metal foil forming a first electrode of each of said more than one embedded singulated individual capacitors, and each of said more than one embedded singulated capacitors further comprising a second electrode, wherein said first electrode and second electrode of said more than one embedded singulated individual capacitors are connected to at least one power terminal of the semiconductor device;
• at least one planar capacitor laminate;
• wherein said more than one of said embedded singulated individual capacitors in said embedded singulated capacitor layer are each connected in parallel to one of the said at least one planar capacitor laminate and said planar capacitor laminate serves as a low inductance path to supply a charge to said more than one embedded singulated individual capacitors;
• wherein each of said more than one embedded singulated individual capacitors connected in parallel to said planar capacitor are closer to a power terminal of the semiconductor device than is the planar capacitor to which the respective singulated individual capacitor is connected in parallel;
• and
• wherein said power core is interconnected to at least one signal layer.