Magnetoresistive sensor with a free layer stabilized by direct coupling to in stack antiferromagnetic layer

A magnetoresistive sensor, comprising:

• a magnetic pinned layer structure;
• a magnetic free layer structure having a magnetization that is free to move in response to a magnetic field;
• a non-magnetic, electrically insulating barrier layer sandwiched between the free and pinned layer structures;
• and
• a bias layer comprising an antiferromagnetic material, the anriferromagnetic material being in contact with the free layer structure;
• wherein the bias layer comprises IrMnCr.

A magnetic data recording system, comprising:

• a magnetic medium;
• a slider;
• an actuator connected with the slider for moving the slider adjacent to a surface of the magnetic medium;
• and
• a magnetoresisitve sensor connected with the slider, the magnetoresistive sensor comprising:
• a free layer structure including a first free magnetic layer, a second free magnetic layer and a non-magnetic, electrically conducive spacer layer disposed between the first and second free magnetic layers the first free magnetic layer and second free magnetic layer each having a magnetization that is free to move in response to a magnetic field;
• and
• a bias layer comprising an antiferromagnetic material, the antiferromagnetic material being exchange coupled with the second free magnetic layer.