Solid state imaging device with increased vertical resolution in interlace scanning method

A solid state imaging device comprising:

• a semiconductor substrate defining a two-dimensional surface;
• a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns;
• an electric charge read-out device that reads out signal electric charges accumulated in said plurality of photoelectric conversion elements in interlace by dividing the signal electric charges in a plurality of fields, each field including at least the signal electric charges accumulated in vertically adjacent photoelectric conversion elements corresponding to green (G) in two vertically adjoining G-lines;
• and
• a vertical adding device that adds, for each field, the read-out signal electric charges divided into the plurality of fields, wherein said signal electric charges accumulated in the vertically adjacent photoelectric conversion elements corresponding to green (G) in the vertically adjoining G-lines are added with each other.