Solid state imaging device incorporating a light shielding film having openings of different sizes

A solid state imaging device, comprising:

• a color decomposer that decomposes incident light into a color of a first wavelength, a color of a second wavelength that is shorter than the first wavelength, and a color of a third wavelength that is shorter than the second wavelength;
• a light shielding film that is formed under the color decomposer and comprises first openings through which light decomposed to the color of the first wavelength is transmitted, second openings through which light decomposed to the color of the second wavelength is transmitted, and third openings through which light decomposed to the color of the third wavelength is transmitted;
• and
• a plurality of photo electric conversion regions that are arranged in lines and columns, each of the photo electric conversion regions generating signal electric charges corresponding to an amount of the incident light by receiving the incident light decomposed by the color decomposer and passed through the openings of the light shielding film and comprising a first photo electric conversion element with a first sensitivity, a second photo electric conversion element with a second sensitivity that is lower than the first sensitivity, and an isolation region provided between the first and second photo electric conversion element, wherein
• a size of a region of each first opening over the second photoelectric conversion element is larger than a size of a region of each second opening over the second photoelectric conversion element or a size of a region of each third opening over the second photoelectric conversion element is smaller than the size of the region of each second opening over the second photoelectric conversion element, wherein the sizes of the region of the first, second, and third openings are determined based on the wavelengths of the first, second, and third colors transmitted therethrough.

A solid state imaging device, comprising:

• a color decomposer that decomposes incident light into a plurality of colors including at least a color of a first wavelength and a color of a second wavelength that is shorter than the first wavelength;
• a light shielding film that is formed under the color decomposer and comprises first openings through which light decomposed to the color of the first wavelength is transmitted and second openings through which light decomposed to the color of the second wavelength is transmitted, the second openings being formed to be smaller than the first openings, wherein sizes of the first and second openings are determined based on the wavelengths of the first and second colors transmitted therethrough;
• and
• a plurality of photo electric conversion regions that are arranged in lines and columns, each of the photo electric conversion regions generating signal electric charges corresponding to an amount of the incident light by receiving the incident light decomposed by the color decomposer and passed through the openings of the light shielding film, each of the photo electric conversion regions includes a high-sensitivity photodiode, a low-sensitivity photodiode, and a photodiode isolation region provided between the high-sensitivity photodiode and the low-sensitivity photodiode,
• wherein the second opening over the low-sensitivity photodiode is smaller than the first opening over the low-sensitivity photodiode, and
• wherein the low-sensitivity photodiode and the high-sensitivity photodiode are impurity layers formed in a semiconductor substrate and separate from a surface of the substrate.