Transition region for use with an antenna-integrated electron tunneling device and method

A method for producing a device, said method comprising:

• forming a first non-insulating strip and a second non-insulating strip spaced apart from one another such that first and second end portions, respectively, of the first and second non-insulating strips cooperate to form an antenna having an antenna impedance and configuring said first and second non-insulating strips to include a transition region that extends from said antenna to a tunneling region in which the first and second non-insulating strips are in a confronting relationship;
• configuring an arrangement to cooperate with a portion of each of the first and second non-insulating strips in said tunneling region to form an electron tunneling structure exhibiting a tunneling region impedance, and further configuring said arrangement to support electron tunneling between and to said first and second non-insulating strips and said transition region to match, at least to an approximation, said antenna impedance to said tunneling region impedance.