Integrated inductor
AssigneeRealtek Semiconductor Corp.
InventorsTa-Hsun Yeh, Yuh-Sheng Jean
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Abstract
An integrated inductor formed on a substrate comprises a metal layer pattern, a via layer pattern overlapping and electrically connected to the metal layer, and a redistribution layer pattern overlapping and electrically connected to the via layer. The metal layer pattern, the via layer pattern, and the redistribution layer pattern are a coil pattern.
Claims37
An inductor formed in an integrated circuit, the inductor comprising:
- a metal layer pattern;
- a redistribution layer pattern formed above the metal layer pattern;
- the redistribution layer pattern residing in a redistribution layer comprising a part of at least a bond pad structure;
- and
- a via layer pattern formed between the metal layer pattern and the redistribution layer pattern, the via layer pattern electrically conductively contacting the metal layer pattern and the redistribution layer pattern;
- wherein the metal layer pattern, the via layer pattern and the redistribution layer pattern substantially overlap at different layers in a coil pattern.
An inductor formed in an integrated circuit, the inductor comprising:
- a substrate;
- a first metal pattern formed above the substrate;
- and
- a second metal pattern formed above the first metal pattern and electrically conductively contacting the first metal pattern, wherein second metal pattern includes a via layer pattern and a redistribution layer pattern, the redistribution layer pattern residing in a redistribution layer comprising a part of at least a bond pad structure;
- wherein the inductor provides a substantial inductance, and the first metal pattern and the second metal pattern are made of different metal materials.
A semiconductor element formed in an integrated circuit comprising a metal layer and at least one bond pad, the semiconductor element comprising:
- a metal layer pattern formed in the metal layer;
- a redistribution layer pattern formed above the metal layer pattern, the redistribution layer pattern residing in a redistribution layer comprising at least one part of the at least a bond pad;
- and
- an interconnect layer pattern formed between the metal layer and the redistribution layer, the interconnect layer electrically conductively contacting the metal layer pattern and the redistribution layer pattern.
A semiconductor element formed in an integrated circuit comprising a metal layer and at least one bond pad, the semiconductor element comprising:
- a first metal pattern formed in the metal layer;
- and
- a second metal pattern formed above the metal layer and electrically conductively contacting the first metal pattern, wherein the second metal pattern includes an interconnect pattern residing in an interconnect layer comprising a first part of the at least one bond pad.
Dependencies are inferred from the claim text.