Layered structure for electron device including regions of different wettability, electron device and electron device array that uses such a layered structure

An electron device comprising a layered structure,

• said layered structure comprising:
• a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension;
• a conductive layer formed on said variable wettability layer at said high surface energy tension part;
• a semiconductor layer formed on said variable wettability layer at said low surface energy part;
• wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part;
• said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material;
• and
• said variable wettability layer having a layered structure comprising,
• 1) a first layer of said first material and
• 2) a second layer formed over said first layer by said second material,
• said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5):

An array of electron devices comprising a plurality of the electron devices,

• each of said electron devices having a layered structure and comprising:
• a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension;
• a conductive layer formed on said variable wettability layer at said high surface energy tension part;
• a semiconductor layer formed on said variable wettability layer at said low surface energy part,
• wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part;
• said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material;
• and
• said variable wettability layer having a layered structure comprising,
• 1) a first layer of said first material and
• 2) a second layer formed over said first layer by said second material,
• said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5):

A display device comprising an electron device array including a plurality of electron devices,

• each of said electron devices having a layered structure and comprising:
• a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension;
• a conductive layer formed on said variable wettability layer at said high surface energy tension part;
• a semiconductor layer formed on said variable wettability layer at said low surface energy part,
• wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part;
• said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material;
• and
• said variable wettability layer having a layered structure comprising,
• 1) a first layer of said first material and
• 2) a second layer formed over said first layer by said second material,
• said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5):