Semiconductor device with improved contact fuse

A semiconductor device, comprising:

• a contact fuse having a conducting layer located over a semiconductor substrate, and a frustrum-shaped contact having a narrow end that contacts the conducting layer and a wide end;
• the frustrum-shaped contact having a width ratio of the wide end to the narrow end of at least about 1.2;
• thereby establishing less resistance at the wide end than at the narrow end;
• a first metal layer located over the contact fuse in contact with the wide end;
• and
• a heat sink located over and contacting the first metal layer;
• the heat sink cooperating with the frustrum-shaped contact to predispose the contact fuse to blow adjacent the narrow end.

A semiconductor device comprising:

• a transistor and a contact fuse formed on a semiconductor substrate;
• one or more interlevel dielectric layers formed over the transistor and the contact fuse;
• a plurality of first contacts connecting source/drains of the transistor to first metal lines formed in the one or more interlevel dielectric layers;
• the contact fuse comprising a contact fuse body, and a plurality of second contacts connecting opposite ends of the contact fuse body to respective second metal lines formed in the one or more interlevel dielectric layers;
• at least one of the second contacts comprising a frustum-shaped contact with a cross-sectional dimension that increases from a narrow end in contact with the fuse body to a wide end in contact with the respective second metal line;
• the frustum-shaped contact having a wide end to narrow end width ration of at least 1.2, thereby providing a greater resistance at the narrow end contact with the fuse body than at the wide end contact with the respective second metal line and predisposing the contact fuse to Now adjacent the narrow end.