Semiconductor package having improved thermal performance

A TSSOP-8 composite semiconductor package comprising:

• a lead frame;
• a common drain MOSFET pair bonded to a first die bonding pad of the lead frame;
• an IC bonded to a second die bonding pad of the lead frame;
• a first plurality of leads coupled to the first die bonding pad;
• a second plurality of leads coupled to the second die bonding pad;
• an encapsulant covering the lead frame, the common drain MOSFET pair, the IC and at least a portion of the first and second plurality of leads;
• and
• wherein the first and second die bonding pads are separated a substantial distance laterally one from the other and the encapsulant disposed between the first and second die bonding pads provides for a thermal barrier therebetween.

A TSSOP-8 composite semiconductor package comprising:

• a lead frame having first and second die bonding pads;
• a common drain MOSFET pair bonded to the first die bonding pad;
• a second device bonded to the second die bonding pad;
• a plurality of first leads coupled to the first die bonding pad, a portion of the plurality of first leads being fused to the first die bonding pad;
• a plurality of second leads coupled to the second die bonding pad, a lead of the plurality of the second leads being fused to the second die bonding pad;
• and
• an encapsulant covering the lead frame, the first and second devices and at least a portion of the first and second pluralities of leads.