Schottky barrier diode and diode array
AssigneePanasonic Corporation
InventorsManabu Yanagihara, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda
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AssigneePanasonic Corporation
InventorsManabu Yanagihara, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda
Estimating the term…
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.
A Schottky barrier diode comprising:
A diode array comprising a plurality of Schottky barrier diodes formed on one semiconductor substrate and connected to one another in parallel,
Dependencies are inferred from the claim text.