Semiconductor device and boost circuit

A booster circuit, comprising:

• a first N-channel field-effect transistor, wherein a first pulse is inputted to a gate;
• a first P-channel field-effect transistor that is serially coupled to the first N-channel field-effect transistor, wherein the first pulse is inputted to a gate;
• a second N-channel field-effect transistor, wherein a gate is coupled to a drain of the first N-channel field-effect transistor;
• a second P-channel field-effect transistor that is serially coupled to the second N-channel field-effect transistor;
• a third N-channel field-effect transistor, wherein a second pulse, which has an opposite phase to the first pulse, is inputted to a gate and a source is coupled to a drain of the second N-channel field-effect transistor;
• a third P-channel field-effect transistor that is serially coupled to the third N-channel field-effect transistor, wherein a source is coupled to a source of the second N-channel field-effect transistor and the second pulse is inputted to a gate;
• a fourth N-channel field-effect transistor wherein a gate is coupled to a drain of the third N-channel field-effect transistor and a source is coupled to a source of the second N-channel field-effect transistor;
• a fourth P-channel field-effect transistor that is serially coupled to the fourth N-channel field-effect transistor, wherein:
• a gate is coupled to a drain of the third P-channel field-effect transistor, a source is coupled to the source of the third P-channel field-effect transistor, and a drain is coupled to a source of the first P-channel field-effect transistor;
• a first capacitor that is coupled to the drain of the second N-channel field-effect transistor, whereto the first pulse is inputted;
• a second capacitor that is coupled to a drain of the fourth N-channel field-effect transistor, whereto the second pulse is inputted;
• and
• a supporting substrate, on which the first to fourth N-channel field-effect transistors;
• the first to fourth P-channel field-effect transistors;
• and the first and second capacitors are provided, that supports the first to fourth N-channel field-effect transistors and the first to fourth P-channel field-effect transistors so that each of the first to fourth N-channel field-effect transistors and the first to fourth P-channel field-effect transistors becomes warpable in a channel direction.