Organic thin film transistor comprising device insulation film and method of manufacturing the same
AssigneeLG Display Co., Ltd.
InventorsChang Wook Han, Hee Suk Pang
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Abstract
An organic thin film transistor (OTFT) includes a substrate, a gate electrode formed on the transparent substrate, a gate insulation film formed on the gate electrode, a source electrode and a drain electrode formed spaced apart from each other on the gate insulation film, a device insulation film formed over the gate, source, and drain electrodes, and an organic semiconductor film formed on the device insulation film.
Claims7
An organic thin film transistor (OTFT), comprising:
- a transparent substrate;
- a gate electrode formed on the substrate;
- a gate insulation film formed on the gate electrode;
- a source electrode and a drain electrode formed spaced apart from each other on the gate insulation film;
- a device insulation film directly formed on an exposed surface of the gate insulation film and entire upper surfaces of the source and drain electrodes, wherein the device insulation film includes one of a silicon oxide, silicon nitride, titania, and alumina, and wherein a thickness of the device insulation film ranges from about 10 Å (angstroms) to about 900 Å (angstroms);
- and
- an organic semiconductor film directly formed on the entire upper surface of the device insulation film.
A method of fabricating an organic thin film transistor (OTFT), comprising the steps of:
- forming a gate electrode on a transparent substrate;
- forming a gate insulation film on the gate electrode;
- forming a source electrode and a drain electrode spaced apart from each other on the gate insulation film;
- directly forming a device insulation film on an exposed surface of the gate insulation film and entire upper surfaces of the source and drain electrodes, wherein the device insulation film includes one of a silicon oxide, silicon nitride, titania, and alumina, and wherein a thickness of the device insulation film ranges from about 10 Å (angstroms) to about 900 Å (angstroms);
- and
- directly forming an organic semiconductor film on the entire upper surface of the device insulation film.
A method of fabricating an organic thin film transistor (OTFT), comprising the steps of:
- forming a gate electrode on a transparent substrate;
- forming a gate insulation film on the gate electrode;
- forming a source electrode and a drain electrode spaced apart from each other on the gate insulation film;
- directly forming a device insulation film on an exposed surface of the gate insulation film and entire upper surfaces of the source and drain electrodes to enhance a carrier mobility by either a chemical vapor deposition process or an atomic layer deposition process, wherein the device insulation film includes a benzocyclobutene, and wherein a thickness of the device insulation film ranges from about 10 Å (angstroms) to about 900 Å (angstroms);
- and
- directly forming an organic semiconductor film on the entire upper surface of the device insulation film.
Dependencies are inferred from the claim text.