Semiconductor storage device and method of manufacturing the same

A semiconductor storage device comprising:

• at least one field effect transistor formed on one surface side of a semiconductor substrate;
• a first insulating film formed to cover the field effect transistor;
• a capacitor array comprising a plurality of ferroelectric capacitors formed close to each other above the first insulating film;
• a single second insulating film configured to cover the entire top portion of the capacitor array, to planarize a space between adjacent ferroelectric capacitors by continuously disposing the single insulating film inside the capacitor array, and to contact with the first insulating film between the adjacent ferroelectric capacitors;
• a hydrogen barrier film formed on the second insulating film;
• and
• said field effect transistor and a ferroelectric capacitor of said array of ferroelectric capacitors are connected in parallel to form a transistor-capacitor parallel unit,
• a transistor-capacitor parallel unit in which said at least one field effect transistor and one ferroelectric capacitor are connected in parallel.