Back to results
US 7,612,395 B2Granted
CMOS image sensors
AssigneeDongbu Electronics Co., Ltd.
InventorIn Gyun Jeon
Life of this patent
Estimating the term…
Abstract
CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.
Claims20
A CMOS image sensor comprising:
- a semiconductor substrate;
- a photodiode on the semiconductor substrate;
- an insulating film on the semiconductor substrate, over the photodiode;
- a microlens that is wider than the photodiode, comprising:
- i) a first dielectric film on the insulating film and over the photodiode, the first dielectric film having a first refractive index;
- ii) a second dielectric directly film on the first dielectric film, the second dielectric film having a second refractive index lower than the first refractive index;
- and
- iii) a sidewall dielectric film directly on at sidewalls of each of the first and second dielectric films and on the insulating film, the sidewall dielectric film having a curved outer surface and a refractive index equal to the first refractive index;
- and
- a fourth dielectric film on the insulating film and on the microlens.
7 more elements
Dependencies are inferred from the claim text.