Heterojunction transistors including energy barriers
AssigneeCree, Inc.
InventorsAdam William Saxler, Yifeng Wu, Primit Parikh
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Abstract
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the barrier layer and the energy barrier. The barrier layer may have a bandgap greater than a bandgap of the channel layer, and a concentration of indium (In) in the energy barrier may be greater than a concentration of indium (In) in the channel layer. Related methods are also discussed.
Claims44
A heterojunction transistor comprising:
- a channel layer comprising a Group III nitride;
- a barrier layer comprising a Group III nitride adjacent the channel layer wherein the barrier layer has a bandgap greater than a bandgap of the channel layer;
- an energy barrier comprising a layer of a Group III nitride including indium adjacent the channel layer such that the channel layer is between the barrier layer and the energy barrier wherein the energy barrier has a narrower bandgap than the channel layer;
- and
- a hole source layer comprising a Group III nitride adjacent the energy barrier such that the energy barrier is between the channel layer and the hole source layer and a hole source region is induced at an interface between the hole source layer and the energy barrier.
A heterojunction transistor comprising:
- a channel layer;
- a barrier layer adjacent the channel layer wherein the barrier layer and the channel layer cooperatively induce a two-dimensional electron gas at an interface between the channel layer and the barrier layer;
- an energy barrier adjacent the channel layer such that the channel layer is between the barrier layer and the energy barrier wherein the energy barrier opposes movement of carriers away from the channel layer wherein the energy barrier has a narrower bandgap than the channel layer;
- and
- a hole source layer adjacent the enemy barrier such that the energy barrier is between the channel layer and the hole source layer wherein a hole source region is induced at an interface between the hole source layer and the energy barrier.
Dependencies are inferred from the claim text.