Method for fabricating a semiconductor device and semiconductor device

A semiconductor device, comprising:

• a translucent portion having a first semiconductor layer that has a first side and a second side;
• the first side of the first semiconductor layer is comprised of a first uniformly distributed periodic structure;
• a light emitting portion that contacts the first side and is comprised of:
• a thin coating of low temperature deposition buffer layer deposited onto the first side that mimics and parallels the first uniformly distributed periodic structure;
• the low temperature deposition buffer layer includes a second buffer side that contacts the first side of the first semiconductor layer, forming a second uniformly distributed periodic structure;
• the low temperature deposition buffer layer further includes a first buffer side forming a third uniformly distributed periodic structure, with the first buffer side contacting a second cladding side of a cladding layer, with the second cladding side forming a fourth uniformly distributed periodic structure as a result of contact with the first buffer side of the low temperature deposition buffer layer;
• a light emitting layer that contacts a first cladding side of the cladding layer;
• a barrier layer that contacts the light emitting layer;
• a contact layer that contacts the barrier layer;
• a p-electrode that contacts the contact layer;
• and
• a n-electrode that contacts the second side of the first semiconductor layer;
• with the first, the second, the third, and the fourth uniformly distributed periodic structure having an effective refractive index that converges gradually towards a second refractive index from a first refractive index as light emitted advances and penetrates more deeply in a height direction of one uniformly distributed periodic structure towards another uniformly distributed periodic structure, which improves transmittance of light by suppressing variations in first and second refractive indexes;
• with light ultimately extracted from the second side of the first semiconductor layer.