Thin film transistor array panel with enhanced storage capacitors

Abstract

A thin film transistor array panel is provided. The array panel includes a storage capacitance that is substantially uniform, and allows for a relatively large capacitance in a relatively small area. In some embodiments, the panel includes: a substrate; a plurality of semiconductor regions on the substrate, including a plurality of source and drain regions doped with a first impurity type and a dummy region doped with a second impurity type, and an intrinsic region having storage and channel regions; a gate insulating layer covering at least a portion of the semiconductor regions; a gate line including a gate electrode at least partially overlapping the channel region and formed on the gate insulating layer; a storage line including a storage electrode at least partially overlapping the storage region and formed on the gate insulating layer; a data line including a source electrode connected to the source region and formed on the gate insulating layer; a drain electrode connected to the drain region and the dummy region and formed on the gate insulating layer; and a pixel electrode connected to the drain electrode.

Dependencies are inferred from the claim text.