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US 7,612,376 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Hisashi Ohtani
Life of this patent
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Abstract
A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and by designing a channel length and a film thickness of a gate insulating film of the TFT according to characteristics required by circuits, it is possible to form a high frequency driving circuit and a low frequency driving circuit on the same substrate.
Claims65
A semiconductor device comprising:
- an N-type thin film transistor having an active layer over a substrate;
- wherein the active layer comprises a channel region with a channel length of 0.01 to 2 μm;
- wherein the active layer comprises crystal grain boundaries substantially extending along a channel length direction and existing between top and bottom surfaces of the active layer;
- and
- wherein a threshold voltage of the N-type thin film transistor is −0.5 to 15V, the semiconductor device further comprising, over the substrate:
- a pixel matrix circuit including at least source lines and gate lines;
- a driver circuit including at least a source line driver circuit for driving the source lines and a gate line driver circuit for driving the gate lines over the substrate;
- and
- a logic circuit for processing a signal required for driving the driver circuit and a signal including image information transmitted to the pixel matrix circuit over the substrate.
6 more elements
A semiconductor device comprising:
- a P-type thin film transistor having an active layer over a substrate;
- wherein the active layer comprises a channel region with a channel length of 0.01 to 2 μm;
- wherein the active layer comprises crystal grain boundaries substantially extending along a channel length direction and existing between top and bottom surfaces of the active layer;
- and
- wherein a threshold voltage of the P-type thin film transistor is −1.5 to 0.5V, the semiconductor device further comprising, over the substrate;
- a pixel matrix circuit including at least source lines and gate lines;
- a driver circuit including at least a source line driver circuit for driving the source lines and a gate line driver circuit for driving the gate lines over the substrate;
- and
- a logic circuit for processing a signal required for driving the driver circuit and a signal including image information transmitted to the pixel matrix circuit over the substrate.
6 more elements
A semiconductor device comprising:
- a thin film transistor having an active layer over a substrate;
- wherein the active layer comprises a channel region with a channel length of 0.01 to 2 μm;
- wherein the active layer comprises crystal grain boundaries substantially extending along a channel length direction and existing between top and bottom surfaces of the active layer;
- and
- wherein a subthreshold coefficient of the thin film transistor is 60 to 100 mV/decade, the semiconductor device further comprising, over the substrate;
- a pixel matrix circuit including at least source lines and gate lines;
- a driver circuit including at least a source line driver circuit for driving the source lines and a gate line driver circuit for driving the gate lines over the substrate;
- and
- a logic circuit for processing a signal required for driving the driver circuit and a signal including image information transmitted to the pixel matrix circuit over the substrate.
6 more elements
A semiconductor device comprising:
- an N-type thin film transistor having an active layer over a substrate;
- wherein the active layer comprises a channel region with a channel length of 0.01 to 2 μm;
- wherein the active layer comprises crystal grain boundaries substantially extending along a channel length direction and existing between top and bottom surfaces of the active layer;
- and
- wherein a field effect mobility of the N-type thin film transistor is 200 to 250 cm2/Vs, the semiconductor device further comprising, over the substrate;
- a pixel matrix circuit including at least source lines and gate lines;
- a driver circuit including at least a source line driver circuit for driving the source lines and a gate line driver circuit for driving the gate lines over the substrate;
- and
- a logic circuit for processing a signal required for driving the driver circuit and a signal including image information transmitted to the pixel matrix circuit over the substrate.
6 more elements
A semiconductor device comprising:
- a P-type thin film transistor having an active layer over a substrate;
- wherein the active layer comprises a channel region with a channel length of 0.01 to 2 μm;
- wherein the active layer comprises crystal grain boundaries substantially extending along a channel length direction and existing between top and bottom surfaces of the active layer;
- and
- wherein a field effect mobility of the P-type thin film transistor is 150 to 200 cm2/Vs, the semiconductor device further comprising, over the substrate;
- a pixel matrix circuit including at least source lines and gate lines;
- a driver circuit including at least a source line driver circuit for driving the source lines and a gate line driver circuit for driving the gate lines over the substrate;
- and
- a logic circuit for processing a signal required for driving the driver circuit and a signal including image information transmitted to the pixel matrix circuit over the substrate.
6 more elements
Dependencies are inferred from the claim text.