Nitride semiconductor light emitting device

A nitride semiconductor light emitting device comprising:

• a substrate;
• a first n-type nitride semiconductor layer formed on said substrate;
• a light emitting layer formed on said first n-type nitride semiconductor layer;
• a p-type nitride semiconductor layer formed on said light emitting layer;
• a p-type nitride semiconductor tunnel junction layer formed on said p-type nitride semiconductor layer;
• an n-type nitride semiconductor tunnel junction layer formed on said p-type nitride semiconductor tunnel junction layer;
• and
• a second n-type nitride semiconductor layer formed on said n-type nitride semiconductor tunnel junction layer;
• wherein said p-type nitride semiconductor tunnel junction layer and said n-type nitride semiconductor tunnel junction layer form a tunnel junction, and at least one of said p-type nitride semiconductor tunnel junction layer and said n-type nitride semiconductor tunnel junction layer includes aluminum;
• an aluminum content of at least one of said p-type nitride semiconductor tunnel junction layer and said n-type nitride semiconductor tunnel junction layer is not less than 1 atomic % and not more than 5 atomic %;
• and
• said p-type nitride semiconductor tunnel junction layer includes aluminum and indium, and indium content is higher than aluminum content.

A nitride semiconductor light emitting device comprising:

• a substrate;
• a first n-type nitride semiconductor layer formed on said substrate;
• a light emitting layer formed on said first n-type nitride semiconductor layer;
• a p-type nitride semiconductor layer formed on said light emitting layer;
• a p-type nitride semiconductor tunnel junction layer formed on said p-type nitride semiconductor layer;
• an n-type nitride semiconductor tunnel junction layer formed on said p-type nitride semiconductor tunnel junction layer;
• and
• a second n-type nitride semiconductor layer formed on said n-type nitride semiconductor tunnel junction layer;
• wherein said p-type nitride semiconductor tunnel junction layer and said n-type nitride semiconductor tunnel junction layer form a tunnel junction;
• at least one of said p-type nitride semiconductor tunnel junction layer and said n-type nitride semiconductor tunnel junction layer includes aluminum;
• an aluminum content of at least one of said p-type nitride semiconductor tunnel junction layer and said n-type nitride semiconductor tunnel junction layer is not less than 1 atomic % and not more than 5 atomic %;
• and
• said n-type nitride semiconductor tunnel junction layer includes aluminum and indium, and indium content is higher than aluminum content.