Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method

A nitride semiconductor light emitting device comprising:

• a silicon substrate having a surface in (111) crystal orientation;
• a first nitride buffer layer formed on the surface of the silicon substrate;
• an amorphous oxide film formed on the first nitride buffer layer;
• a second nitride buffer layer formed on the amorphous oxide film;
• a first conductivity-type nitride semiconductor layer formed on the second nitride buffer layer;
• an active layer formed on the first conductivity-type nitride semiconductor layer;
• and
• a second conductivity-type nitride semiconductor layer formed on the active layer,
• wherein the amorphous oxide film is an Al2O3 amorphous film and the first buffer layer comprises AlN.

A method for manufacturing a nitride semiconductor light emitting device comprising steps of:

• preparing a silicon substrate having a surface in (111) crystal orientation;
• forming a first nitride buffer layer on the surface of the silicon substrate;
• forming an amorphous oxide film on the first nitride buffer layer;
• forming a second nitride buffer layer on the amorphous oxide film;
• forming a first conductivity-type nitride semiconductor layer on the second nitride buffer layer;
• forming an active layer on the first conductivity-type nitride semiconductor layer;
• and
• forming a second conductivity-type nitride semiconductor layer on the active layers,
• wherein the amorphous oxide film is an Al2O3 amorphous film and the first buffer layer comprises AlN.