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US 7,612,358 B2Granted
Nonvolatile nanochannel memory device using mesoporous material
AssigneeSamsung Electronics Co., Ltd.
InventorsWon Jae Joo, Jin Heong Yim, Kwang Hee Lee, Sang Kyun Lee
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Abstract
A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer having metal nanoparticles or metal ions fed into the nanochannels is disposed between an upper electrode and a lower electrode. Thus, the memory device has high processability, and manifests excellent reproducibility and uniform performance.
Claims19
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a memory layer disposed between the first and second electrodes, wherein the memory layer includes a mesoporous material and nanochannels, the nanochannels being comprised of metal nanoparticles or metal ions, and the memory layer showing bistable resistance values;
- and
- a barrier layer disposed between the memory layer and the second electrode to control the concentration and distribution of the metal nanoparticles or metal ions in the nanochannels,
- wherein the barrier layer is formed on top of the nanochannels of the memory device, the barrier layer being configured such that the metal nanoparticles or metal ions can be fed into the nanochannels through the barrier layer.
4 more elements
Dependencies are inferred from the claim text.