Radiation detector and method

A radiation detector, comprising:

• a semiconductor body with a first side and with a second side;
• a first base zone of a first conduction type, arranged in the semiconductor body;
• at least one second base zone of a second conduction type complementary to the first conduction type, arranged at least partly in the first base zone and extends in a vertical direction of the semiconductor body;
• a first connection electrode, connected to the first base zone, and a second connection electrode, which is connected to the second base zone;
• and
• wherein the semiconductor body comprises a semiconductor substrate and several contiguous epitaxial layers applied on the semiconductor substrate, each layer having a basic doping of the first conduction type, wherein the first and the second base zone are arranged at least partly in the epitaxial layers, and wherein the first connection electrode makes contact with the semiconductor substrate at a side remote from the epitaxial layers.

A radiation detector, comprising:

• a semiconductor body with a first side and with a second side;
• a first base zone of a first conduction type, arranged in the semiconductor body;
• at least one second base zone of a second conduction type complementary to the first conduction type, arranged at least partly in the first base zone and extends in a vertical direction of the semiconductor body;
• the semiconductor body including a semiconductor substrate and several contiguous epitaxial layers applied on the semiconductor substrate, each layer having a basic doping of the first conduction type, wherein the first and the second base zone are arranged at least partly in the epitaxial layers, and wherein a first connection electrode makes contact with the semiconductor substrate at a side remote from the epitaxial layers.