Semiconductor device and a manufacturing method of the same

A manufacturing method of a semiconductor device, comprising:

• forming a transistor having a gate electrode, a first impurity diffusion layer and a second impurity diffusion layer on a surface of a semiconductor substrate;
• forming a first insulating film covering said transistor;
• forming a second insulating film on said first insulating film;
• separating said first insulating film into a part of said first impurity diffusion layer side and a part of said second impurity diffusion layer side, with said gate electrode being a boundary;
• forming a contact hole reaching said first impurity diffusion layer in said first and second insulating films;
• forming a hollow portion between said first impurity diffusion layer and said second insulating film by removing said first insulating film exposed to said contact hole;
• and
• forming a conductive film in said hollow portion.

A manufacturing method of a semiconductor device, comprising:

• forming a transistor having a gate electrode, a first impurity diffusion layer and a second impurity diffusion layer on a surface of a semiconductor substrate;
• forming a first insulating film which is apart from said second impurity diffusion layer on said first impurity diffusion layer;
• forming a second insulating film covering said transistor and said first insulating film;
• forming a contact hole reaching said first impurity diffusion layer in said first and second insulating films;
• forming a hollow portion between said first impurity diffusion layer and said second insulating film by removing said first insulating film exposed to said contact hole;
• and
• forming a conductive film in said hollow portion.