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US 7,611,974 B2Granted
Multilayer structure and fabrication thereof
AssigneeS.O.I. Tec Silicon on Insulator Technologies
InventorFabrice Letertre
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Abstract
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity.
Claims13
A process for fabricating a multilayer structure comprising:
- a) growing a growth layer on a silicon substrate that is adapted and configured to permit growth of III-V materials thereon;
- b) forming at least one pattern from the growth layer;
- c) depositing an oxide layer on the silicon substrate;
- d) transferring a silicon active layer onto the oxide layer;
- e) forming a cavity through the silicon active layer and in the oxide layer above the at least one pattern to expose the growth layer;
- and
- f) growing a III-V material in the cavity on the growth layer.
4 more elements
Dependencies are inferred from the claim text.