Zr-Sn-Ti-O films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. In an embodiment, forming the Zr—Sn—Ti—O film on a substrate includes depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers. In an embodiment, electronic devices include a dielectric layer having a Zr—Sn—Ti—O film such that Zr—Sn—Ti—O material is configured as substantially atomic monolayers. Dielectric layers containing such Zr—Sn—Ti—O films may have minimal reactions with a silicon substrate or other structures during processing.
Claims45
A method of forming a dielectric film comprising:
- forming a Zr—Sn—Ti—O film on a substrate by depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film.
A method of forming a dielectric film comprising:
- depositing a titanium-containing precursor and a first oxygen-containing precursor onto a surface;
- depositing a zirconium-containing precursor and a second oxygen-containing precursor onto the surface;
- and
- depositing a tin-containing precursor and a third oxygen-containing precursor onto the surface to form a Zr—Sn—Ti—O film substantially at an atomic monolayer level of deposition such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film.
A method of forming a dielectric film comprising:
- forming TiO2 onto a surface;
- depositing a zirconium-containing precursor and a second oxygen-containing precursor onto the surface;
- and
- depositing a tin-containing precursor and a third oxygen-containing precursor onto the surface to form a Zr—Sn—Ti—O film substantially at an atomic monolayer level of deposition such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film.
A method of forming a capacitor, comprising:
- forming a first conductive layer on a substrate;
- forming a Zr—Sn—Ti—O film on the first conductive layer by depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film;
- and
- forming a second conductive layer on the dielectric film.
A method of forming a transistor comprising:
- forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
- forming a dielectric layer on the body region between the source and drain regions, the dielectric layer containing a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film;
- and
- coupling a gate to the dielectric layer.
A method of forming a memory comprising:
- forming a number of access transistors, at least one of the access transistors including a dielectric layer on a body region between a source region and a drain region, the dielectric layer containing a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the source regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the drain regions of the number of access transistors.
A method of forming an electronic system comprising:
- providing a processor;
- coupling a memory to the processor, wherein the memory includes at least one access transistor having a dielectric layer on a body region between a source region and a drain region, the dielectric layer containing a Zr—Sn—Ti—O layer, wherein forming the Zr—Sn—Ti—O layer includes forming a Zr—Sn—Ti—O film on a substrate by depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers such that each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film.
Dependencies are inferred from the claim text.