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US 7,611,946 B2Granted
Method of fabricating a non-volatile memory device
AssigneeHynix Semiconductor Inc.
InventorIn Kwon Yang
Life of this patent
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Abstract
A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a select line, from being injected into a floating gate of the program-inhibited cell. The program-inhibited cell shares a word line adjacent to the select line such that a trench is formed in the semiconductor substrate between the select line and the adjacent word line to increase a distance between the select line and the word line.
Claims13
A method of fabricating a non-volatile memory device, the method comprising:
- providing a semiconductor substrate in which a tunnel insulating layer, a first conductive layer, a dielectric layer and a second conductive layer are formed on an active area;
- forming a contact hole by removing a portion of the second conductive layer and the dielectric layer, wherein the contact hole is formed in an area between a select line and a word line are to be formed;
- forming a third conductive layer over the second conductive layer, wherein the third conductive layer fills the contact hole;
- and
- patterning the third conductive layer, the second conductive layer, the first conductive layer and the tunnel insulating layer to form a select line and a word line, wherein a trench is formed in the semiconductor substrate between the select line and the word line.
2 more elements
Dependencies are inferred from the claim text.