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US 7,611,913 B2Granted
Ferroelectric rare-earth manganese-titanium oxides
AssigneeIntematix Corporation
InventorsYi-Qun Li, Young Yoo, Qizhen Xue, Ning Wang, Daesig Kim
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Abstract
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
Claims18
A method of preparing a ferroelectric material, said method comprising:
- forming one or more layers on a substrate, the one or more layers comprising:
- Y, A, Mn, and B in a proportion according to the formula (Y1−xAx)(Mn1−yBy), wherein A comprises a metal having a valence of 3 and 0<x<1, and B comprises a metal having a valence of 4 or 3 and 0<y<1;
- heating the layers to a temperature ranging from about 600° C. to about 800° C.;
- and,
- providing an atmosphere comprising oxygen, said atmosphere having a pressure of less than 10−3 torr;
- crystallizing the layers in the atmosphere at the temperature to form the ferroelectric material.
3 more elements
Dependencies are inferred from the claim text.