Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor

A method of manufacturing a semiconductor thin film for growing a crystal grain on the semiconductor thin film, the method comprising the steps of:

• providing a mask having a beam shaped opening corresponding to a beam shape therein, the beam shaped opening including a first portion projecting into an interior of the beam shaped opening;
• irradiating a laser beam through the beam shaped opening to shape the laser beam into a continuous rectangular shaped irradiation pattern, a part of the rectangular shaped irradiation pattern along one side is shaped into a control pattern, said control pattern including at least one notch in the rectangular shaped irradiation pattern corresponding to said first portion and defining an area not to be irradiated;
• growing a band-form crystal grain on the semiconductor thin film based a position control of crystal grain boundaries established by the control pattern by irradiating the laser beam through the mask while scanning the laser beam.

A manufacturing method of a semiconductor thin film for growing a crystal grain on a semiconductor thin film by irradiating a laser beam onto the semiconductor thin film formed on an insulating substrate, the method comprising a step of shaping a laser beam, wherein

• in the step of shaping the laser beam, an irradiation pattern of the laser beam to be irradiated onto the semiconductor thin film is shaped into a shape having at least one notch of a convex shape at a periphery of the irradiation pattern in a long axis direction of the irradiation pattern which has the long axis direction and a short axis direction.

A manufacturing method of a semiconductor thin film for growing a crystal grain on a semiconductor thin film by performing scanning irradiation of the laser beam onto the semiconductor thin film formed on an insulating substrate, the method comprising a step of shaping a laser beam, wherein

• in the step of shaping a laser beam, an irradiation pattern of the laser beam to be irradiated onto the semiconductor thin film is shaped into a shape having at least one notch of a convex shape at a peripheral edge of the irradiation pattern which is in a perpendicular direction to a scanning direction.