High accuracy, high temperature, redundant media protected differential transducers

A semiconductor chip for use in fabricating pressure transducers, comprising:

• a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on said top surface, said bottom surface having at least two recesses of substantially equal dimensions and spaced apart, said recesses providing a first and second equal thin active areas, which areas deflect upon application to a force applied to said top surface, and a boss therebetween;
• a first plurality of piezoresistive devices positioned on said insulating material and, arranged in a given pattern, wherein selected ones of the first plurality of piezoresistive devices are located above a region defined by said first active area, and remaining ones of the first plurality of piezoresistive devices are arranged outside first active area, said devices being alternately arranged above and outside said first active area;
• a second equal plurality of piezoresistive devices, located on said insulating material arranged in a pattern, wherein selected ones of the second plurality of piezoresistive devices are located above a region defined by said second active area, and remaining ones of the second plurality of piezoresistive devices are arranged outside second active area, said devices being alternately arranged above and outside said second active area;
• first connecting means for connecting said first plurality of piezoresistive devices in a first array, wherein said selective ones of said first connecting means being arranged between each of said first plurality of piezoresistive devices to selectively configure said first array;
• second connecting means for connecting said second plurality of piezoresistive devices in a second array wherein selective ones of said second connecting means are arranged between each of said second plurality of piezoresistive devices to selectively configure said second array.