High brightness—multiple beamlets source for patterned X-ray production

A device for patterned beamlet extraction comprising:

• a) a multicusp ion source for forming a plasma;
• b) an extractor electrode comprising one side of the multicusp ion source, said extractor electrode including a plurality of apertures that pass through from the conductive plasma side of the ion source through a bulk insulator, and continuing through a conductive exit side, wherein at least one of the extractor electrode apertures are electrically connected with the conductive exit side as the aperture passes through the bulk insulator;
• and,
• c) means for controllably biasing the conductive exit side of one or more of the apertures in the extractor electrode to extract a pattern of beamlets.

A device for patterned beamlet extraction comprising:

• a) a multicusp ion source having a plasma;
• b) computer controlled means whereby selectable patterns of electron beamlets are extracted from the plasma;
• c) a target biased relative to the plasma to impinge at least one of the electron beamlets to produce X-rays;
• and,
• d) a collimator proximally located to the target, whereby collimated patterned X-rays are produced.

A device for remote scanning, comprising:

• a) a multicusp ion source having a plasma;
• b) computer controlled means whereby selectable patterns of collimated X-rays are produced from electron beamlets extracted from the plasma;
• c) a detector disposed to detect X-ray transmission and scatter from the selectable patterns of collimated X-rays as the X-rays pass through a test subject;
• and
• d) a computer to analyze data input from the detector so as to provide a computed axial tomograph (CAT) scan.

A method of patterned beamlet extraction for the production of X-rays, comprising:

• a) supplying a multicusp plasma source substantially containing a plasma;
• b) providing an extractor electrode abutting the plasma,
• i) the extractor electrode comprising:
• (1) a plurality of apertures that pass through a conductive plasma side in direct contact with the plasma,
• (2) through a bulk insulator, and,
• (3) continuing through a conductive exit side, wherein at least one of the extractor electrode apertures are electrically connected with the conductive exit side as the aperture passes through the bulk insulator;
• ii) the extractor electrode comprising one side of the multicusp plasma source;
• and
• c) controllably biasing the conductive exit side of one or more of the apertures in the extractor electrode to extract a pattern of electron beamlets;
• d) providing a biased electron beamlet target sufficiently biased for X-ray production at a certain energy;
• and,
• e) impinging the electron beamlet onto the biased target, thereby producing X-rays.