US 7,609,579 B2Granted

Memory module with failed memory cell repair function and method thereof

AssigneeEtron Technology, Inc.

InventorsChun Shiah, Tzu Jen Ting, Ho-Yin Chen

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Abstract

A memory module with failed memory cell repair function and method thereof are provided. The memory module comprises a programming interface, a mode register, a control signal generator, a fuse unit, a main memory array and a redundant memory array, wherein the programming interface is defined by selecting pins from a standard interface of the memory module. The programming interface is used to input a plurality of programming commands and a plurality of programming data. When the failed memory cells have occurred within the main memory array, the mode register will enter into a programming mode according to the programming commands, and the control signal generator will program the fuse unit, such that the redundant memory cells of the redundant memory array will be used to replace the failed memory cells. Thus, the fuse unit can be programmed directly through the standard interface, and the repairing period and the cost will be reduced efficiently.

Claims16

Dependent claims

A memory module with failed memory cell repair function, comprising:

a programming interface comprising a plurality of pins selected from a standard interface of said memory module, and used to input a plurality of programming commands and a plurality of programming data;
a mode register connected to said standard interface for receiving said programming commands, and said memory module entering into one of a programming mode and a standard mode according to said programming commands;
a control signal generator connected to said standard interface and said mode register for receiving said programming commands and said programming data;
a fuse unit connected to said control signal generator;
a main memory array comprising a plurality of main memory cells, connected to said control signal generator;
and
a redundant memory array comprising a plurality of redundant memory cells, connected to said fuse unit and said control signal generator for replacing the failed memory cells of said main memory array according to said fuse unit;
wherein said control signal generator programs said fuse unit according to said programming commands and said programming data when said memory module is in said programming mode.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/984,707Filed 21 Nov 2007
Published: US 2009/0129182 A121 May 2009
Granted: 27 Oct 2009
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

G11C 17/165
Using electrically-fusible links: memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple…
G11C 5/04
Disposition of storage elements, e.g. in the form of a matrix array: supports for storage elements , e.g. memory modules; Mounting or fixing of…
G11C 29/72
Masking faults in memories by using spares or by reconfiguring: with optimized replacement algorithms
G11C
Static stores

Family

US 2009/0129182 A1Pre-grant publication · published 21 May 2009
US 7,609,579 B2This patent

From the US filing history. Foreign family members aren’t listed.

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