Semiconductor memory device having a control unit receiving a sensing block selection address signal and related method
AssigneeSamsung Electronics Co., Ltd.
InventorDoo-Gon Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorDoo-Gon Kim
Estimating the term…
Embodiments of the invention include a semiconductor memory device and a method for operating the semiconductor memory device. The invention includes a semiconductor memory device comprising a memory cell array block including a plurality of first memory cells connected to a plurality of first bit lines and a plurality of second memory cells connected to a plurality of second bit lines. The semiconductor memory device further includes a first sensing block disposed on a first side of the memory cell array block, a second sensing block disposed on a second side of the memory cell array block, and a control unit receiving a sensing block selection address signal, wherein, when the sensing block selection address signal specifies the first sensing block, the control unit enables the first sensing block and disables the second sensing block.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A method for operating a semiconductor memory device comprising a memory cell array block, wherein the memory cell array block comprises a plurality of first memory cells connected to a plurality of first bit lines and a plurality of second memory cells connected to a plurality of second bit lines, the method comprising:
Dependencies are inferred from the claim text.