NAND flash memory device with burst read latency function
AssigneeSamsung Electronics Co., Ltd.
InventorSang-won Hwang
Life of this patent
Estimating the term…
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AssigneeSamsung Electronics Co., Ltd.
InventorSang-won Hwang
Estimating the term…
A NAND flash memory device may include an interface block which receives an external read enable signal to output an internal clock signal during a read operation. The NAND flash memory device may also include a buffer clock controlling circuit which operates in response to a data output enable signal and the internal clock signal. The NAND flash memory device may also include a buffer clock generating circuit which receives the internal clock signal and which generates first and second buffer clock signals according to a control output of the buffer clock control circuit. The NAND flash memory device may also include a data output buffer circuit which sequentially outputs read data in response to one of the first and second buffer clock signals, wherein the buffer clock controlling circuit controls the buffer clock generating circuit to generate the second buffer clock signal having a single pulse when the data output enable signal is activated.
A NAND flash memory device comprising:
A memory system comprising a NAND flash memory device, and a memory controller which outputs a read enable signal to the NAND flash memory device during a read operation and which takes data from the NAND flash memory device after a burst latency time passed, wherein the NAND flash memory device comprises:
A NAND flash memory device comprising:
Dependencies are inferred from the claim text.