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US 7,609,432 B2Granted
Nanowire-based device and method of making same
AssigneeHewlett-Packard Development Company, L.P.
InventorsTheodore I. Kamins, Wei Wu, Shih-Yuan Wang, Shashank Sharma
Life of this patent
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Abstract
A nanoelectromechanical (NEM) device and a method of making same employ a laterally extending nanowire. The nanowire is grown in place from a vertical side of a vertically extending support block that is provided on a horizontal surface of a substrate. The nanowire is spaced from the horizontal surface. The NEM device includes a component that is provided to influence the nanowire.
Claims20
A nanoelectromechanical (NEM) device comprising:
- a support block extending vertically from a horizontal surface of a substrate, the support block having a vertical side;
- a nanowire extending laterally from the vertical side of the support block, the nanowire being spaced from the horizontal surface of the substrate;
- and
- a component that influences the nanowire.
1 more element
A nanoelectromechanical (NEM) device comprising:
- a support block extending vertically from a semiconductor substrate having a horizontal surface;
- a nanowire extending laterally from a vertical side of the support block, the nanowire being spaced from the horizontal surface of the semiconductor substrate;
- and
- means for influencing the nanowire, such that the nanowire facilitates one or more of light deflection, light generation, and an acceleration response.
1 more element
A method of making a nanoelectromechanical (NEM) device comprising:
- providing a support block on a planar substrate having a horizontal surface;
- growing a nanowire from a vertical side of the support block using metal catalyzed growth, such that the nanowire grows laterally from the vertical side, the nanowire being spaced from the horizontal substrate surface;
- and providing a component that influences the nanowire.
Dependencies are inferred from the claim text.