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US 7,609,195 B2Granted
On die thermal sensor and method for generating thermal code of ODTS
AssigneeHynix Semiconductor Inc.
InventorChun-Seok Jeong
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Abstract
An on die thermal sensor (ODTS) in a memory device includes: a band gap unit for detecting a temperature of the memory device to output a first voltage corresponding to the temperature; and an analog-to-digital converting unit for outputting a digital code having temperature information based on the first voltage, the digital code having varied resolution according to temperature ranges.
Claims22
An on die thermal sensor (ODTS) in a memory device, comprising:
- a band gap unit for detecting a temperature of the memory device and outputting a first voltage corresponding to the temperature;
- and
- an analog-to-digital converting unit for outputting a digital code having temperature information based on the first voltage,
- wherein the analog-to-digital converting unit generates the digital code having varied resolution according to temperature ranges by using a plurality of pull-down driving units of the analog-to-digital converting unit, each of which has a different driving ability according to the temperature ranges.
1 more element
A memory device, comprising:
- an on die thermal sensor (ODTS) for outputting a digital code including temperature information by detecting a temperature of the memory device;
- a signal converter for converting the digital code into a form which is needed in the memory device;
- and
- a self-refresh oscillator for controlling a self-refresh period of the memory device according to an output signal of the signal converter,
- wherein the ODTS generates the digital code having varied resolution according to temperature ranges by using a plurality of pull-down driving units of the ODTS, each of which has a different driving ability according to the temperature ranges.
2 more elements
A method for generating a thermal code of an ODTS in a memory device, the method comprising:
- outputting a first voltage by detecting a temperature of the memory device;
- comparing the first voltage with a second voltage;
- increasing or decreasing a digital code based on the comparison result, wherein the digital code is a binary code;
- and
- generating a group of adjusting codes by decoding the digital code, wherein a number of the adjusting codes in the adjusting code group that have a logic value one (1) is adjusted based on the decoded digital code;
- and
- generating a second voltage by adjusting an amount of a current flowing on a node based on the adjusting code group,
- wherein a slope of the second voltage is varied according to temperature ranges.
5 more elements
Dependencies are inferred from the claim text.