High resistivity thin film composition and fabrication method

A high resistivity thin film, comprising:

• silicon;
• an insulator comprising alumina (Al2O3), silicon dioxide (SiO2), or both;
• and
• at least one additional material, said additional materials selected from a group consisting of chromium, nickel, boron and/or carbon, said silicon, insulator and additional materials combined to form a thin film having a resistivity (ρ) of 0.02-1.0 Ω-cm, a temperature coefficient of resistance (TCR) less than ±300 ppm/° C., and a sheet resistance of at least 5 kΩ/□.

A method of forming a high resistivity thin film, comprising:

• providing an insulator comprising alumina (Al2O3), silicon dioxide (SiO2), or both;
• providing silicon;
• providing at least one additional material, said additional materials selected from a group consisting of chromium, nickel, boron and/or carbon;
• combining said insulator, silicon and additional materials to form a thin film;
• said providing and combining carried out such that said thin film has a resistivity (ρ) of at least 0.02 Ω-cm and a temperature coefficient of resistance (TCR) less than ±1000 ppm/° C.

A method of forming a high resistivity thin film, comprising:

• providing an insulator comprising alumina (Al2O3), silicon dioxide (SiO2), or both;
• providing silicon;
• providing at least one additional material, said additional materials selected from a group consisting of chromium, nickel, boron and/or carbon;
• combining said insulator, silicon and additional materials to form a thin film;
• depositing said thin film;
• annealing said deposited thin film;
• said providing, combining, depositing and annealing being carried out such that said deposited and annealed thin film has a resistivity (ρ) of at least 0.02 Ω-cm and a temperature coefficient of resistance (TCR) less than ±1000 ppm/° C.