Power semiconductor module

A power semiconductor module comprising:

• a ceramic substrate with printed circuit having metal electrodes formed on both faces of a ceramic substrate;
• at least one power semiconductor device;
• an insulating inorganic material having a coefficient of thermal expansion in a range of 2 to 6 ppm/K;
• and
• a mold resin material having a coefficient of thermal expansion of 10 ppm/K or less,
• wherein
• the ceramic substrate with printed circuit is disposed on each of above and below the device,
• electrodes located above and below the device are joined to the upper and lower metal electrodes on ceramic substrates with printed circuit with an alloy phase having a temperature at solidus line of at least 260° C.,
• the inorganic material is disposed around the semiconductor device, and
• a space between the ceramic substrates with printed circuit is filled with the mold resin material.

A power semiconductor module comprising:

• a ceramic substrate with printed circuit having metal electrodes formed on both faces of a ceramic substrate;
• at least one power semiconductor device;
• an insulating inorganic material having a coefficient of thermal expansion in a range of 2 to 6 ppm/K;
• a sealed capsule comprising a plurality of electric input and output parts electrically isolated by the insulating inorganic material;
• and
• an insulating gaseous or liquid coolant,
• wherein
• the ceramic substrate with printed circuit is disposed on each of above and below the power semiconductor device,
• electrodes are joined to the metal electrodes on ceramic substrates with printed circuit with an alloy layer having a melting point of at least 260° C.,
• the inorganic material is disposed around the semiconductor device,
• those constituent materials are incorporated in the sealed capsule,
• inside of the sealed capsule is filled with the coolant, and
• the metal electrodes on ceramic substrates with printed circuit are electrically connected to the electric input and output parts.