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US 7,608,904 B2Granted
Semiconductor device components with conductive vias and systems including the components
AssigneeMicron Technology, Inc.
InventorNishant Sinha
Life of this patent
Estimating the term…
Abstract
A semiconductor device component includes at least one conductive via. The at least one conductive via may include a seed layer for facilitating adhesion of a conductive material within the via aperture, a barrier material and solder, or a silicon-containing filler. Systems including such semiconductor device components are also disclosed.
Claims27
An intermediate semiconductor component, comprising:
- a substrate having a first surface and an opposite, second surface and including an aperture that communicates with the first surface and extends partially through the substrate;
- and
- at least one via extending into the first surface of the substrate and terminating short of the opposite, second surface and including a seed layer comprising conductive material for facilitating adhesion of conductive material within the at least one via at least partially over a surface of the aperture, an annular conductive layer contacting the seed layer, and a filler material occupying a remainder of the via, the filler material circumscribed by and contacting the annular conductive layer.
A semiconductor device component, comprising:
- a substrate having a first surface and an opposite, second surface;
- and
- at least one via, comprising:
- an annular conductive layer extending from the first surface of the substrate to the opposite, second surface of the substrate;
- a silicon-containing filler material comprising polysilicon circumscribed by the annular conductive layer;
- and
- at least one bond pad overlying at least a portion of the at least one via on at least one of the first surface and the opposite, second surface of the substrate.
4 more elements
A system comprising:
- a microprocessor;
- and
- at least one memory device in communication with the microprocessor, comprising:
- a substrate having a first surface and an opposite, second surface;
- and
- at least one via, comprising:
- an annular layer of a conductive material extending from the first surface of the substrate to the opposite, second surface of the substrate and comprising an electroless plated metal layer and a seed layer;
- and
- a silicon-containing filler material comprising polysilicon circumscribed by the annular layer of the conductive material, the filler material extending from the first surface of the substrate to the opposite, second surface of the substrate.
6 more elements
A semiconductor component, comprising:
- a substrate having a first surface and an opposite, second surface;
- and
- at least one via, comprising:
- an electrically insulative layer on at least one sidewall of the substrate that at least partially defines at least one aperture through the substrate;
- and
- a conductive filler material comprising solder extending from the first surface of the substrate to the opposite, second surface of the substrate, in contact with the electrically insulative layer, and isolated from the substrate by at least the electrically insulative layer.
3 more elements
A system comprising:
- a microprocessor;
- and
- at least one memory device in communication with the microprocessor comprising:
- a substrate having a first surface and an opposite, second surface;
- and
- at least one via, comprising:
- an electrically insulative layer;
- and
- a conductive filler material comprising solder, extending from the first surface of the substrate to the opposite, second surface of the substrate, contacting the electrically insulative layer, and electrically isolated from the substrate by at least the electrically insulative layer.
6 more elements
A semiconductor device component, comprising:
- a substrate having a first surface and an opposite, second surface;
- and
- at least one via, comprising:
- an annular conductive layer comprising an electroless plated metal layer and a seed layer located between the electroless plated metal layer and the substrate, the annular conductive layer extending from the first surface of the substrate to the opposite, second surface of the substrate;
- and
- a silicon-containing filler material comprising polysilicon circumscribed by the annular conductive layer.
3 more elements
A system comprising:
- a microprocessor;
- and
- at least one memory device in communication with the microprocessor, comprising:
- a substrate having a first surface and an opposite, second surface;
- and
- at least one via, comprising:
- an annular layer of a conductive material extending from the first surface of the substrate to the opposite, second surface of the substrate;
- and
- a silicon-containing filler material comprising polysilicon circumscribed by the annular layer of the conductive material, the filler material extending from the first surface of the substrate to the opposite, second surface of the substrate;
- and
- at least one bond pad overlying at least a portion of the at least one via on at least one of the first surface and the opposite, second surface of the substrate.
8 more elements
Dependencies are inferred from the claim text.