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US 7,608,897 B2Granted
Sub-surface region with diagonal gap regions
OwnerMike Pelham, James B. Burrinventors
Life of this patent
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Abstract
Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.
Claims20
A semiconductor device comprising:
- a surface;
- a plurality of surface wells of a first conductivity formed below the surface;
- and
- a sub-surface layer of the first conductivity formed below the surface wells and electrically coupled to the surface wells, wherein the sub-surface layer comprises gap regions oriented diagonally with respect to an orientation of the surface wells.
1 more element
A semiconductor device comprising:
- a surface;
- a first surface well of a first conductivity formed below the surface;
- a second surface well of the first conductivity formed below the surface;
- a region of a second conductivity below the surface and between the first surface well and the second surface well;
- and
- a sub-surface layer of the first conductivity formed below the first and second surface wells and below the region and electrically coupled to the first and second surface wells, wherein the sub-surface layer comprises gap regions oriented diagonally with respect to an orientation of the first and second surface wells without isolating the region.
3 more elements
A semiconductor device comprising:
- a surface;
- a first surface well of a first conductivity formed below the surface;
- a second surface well of the first conductivity formed below the surface;
- and
- a sub-surface mesh structure of the first conductivity formed below the first and second surface wells and electrically coupled to the first and second surface wells, wherein the sub-surface mesh structure is oriented diagonally with respect to an orientation of the first and second surface wells.
2 more elements
Dependencies are inferred from the claim text.