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US 7,608,883 B2Granted
Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
AssigneeIntel Corporation
InventorsMarko Radosavljevic, Amlan Majumdar, Suman Datta, Justin Brask, Brian Doyle, Robert Chau
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Abstract
A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain electrodes. The transistor has a gate electrode and dielectric material containing one or more quantum dots between the carbon nanotube and the gate electrode.
Claims6
A method, comprising:
- altering a threshold voltage of a transistor by creating a tunneling current that flows through dielectric material located between a quantum dot and into a layer of conductive material, said quantum dot disposed in said dielectric material and located between a carbon nanotube and said layer of conductive material, said transistor having said carbon nanotube electrically coupled between source and drain electrodes, said layer of conductive material forming at least part of said transistor's gate, wherein said electron tunneling current is substantially greater than second tunneling current, if any, between said quantum dot and said carbon nanotube.
Dependencies are inferred from the claim text.