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US 7,608,878 B2Granted
Semiconductor device manufactured with a double shallow trench isolation process
AssigneeHynix Semiconductor Inc.
InventorSeung Joo Baek
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Abstract
A method for manufacturing a semiconductor device includes forming a device isolation film by a double Shallow Trench Isolation (STI) process, forming a first active region having a negative slope and a second active region having a positive slope. Additionally, the method includes applying a recess region and a bulb-type recess region to the above-extended active region so as to prevent generation of horns in the active regions. This structure results in improvement in effective channel length and area.
Claims6
A semiconductor device comprising:
- a first trench formed in a semiconductor substrate, wherein sidewalls of the first trench have a negative slope;
- a second trench formed in the semiconductor substrate below the first trench such that the second trench is in communication with the first trench, wherein sidewalls of the second trench have a positive slope;
- a device isolation film for filling the first and second trenches;
- an active region defined by the device isolation film;
- and
- a gate formed over the active region, wherein the gate comprises a recess region,
- wherein a depth of the first trench is substantially equal to or greater than a depth of the recess region.
4 more elements
Dependencies are inferred from the claim text.