Complementary metal oxide semiconductor image sensor and method for fabricating the same
OwnerSang-Young Kiminventor
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Abstract
A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.
Claims3
A complementary metal oxide semiconductor (CMOS) image sensor, comprising:
- a first conductive type substrate including a trench;
- a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench;
- a device isolation layer formed on the channel stop layer to fill the trench;
- a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer;
- a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode;
- and
- a floating diffusion region formed in a portion of the substrate opposite to the photodiode and adjacent to the transfer gate structure to receive the photo-electrons from the transfer gate structure,
- wherein bottom portions of the channel stop Layer are located in a deeper position from the surface of the first conductive type substrate than bottom portions of the second conductive type photodiode.
Dependencies are inferred from the claim text.