Semiconductor light-emitting device with transparent conductive film

A semiconductor light-emitting device with a transparent conductive film, comprising:

• a light-emitting portion formed on a semiconductor substrate, said light-emitting portion comprising at least an n-type clad layer, an active layer and a p-type clad layer doped with Mg;
• an As-based contact layer formed on said light-emitting portion, said contact layer being doped with Zn as a p-type dopant of 1×1019/cm3 or more;
• a current spreading layer formed on said contact layer, said current spreading layer comprising a transparent conductive film of a metal oxide material;
• and
• a buffer layer formed between said contact layer and said p-type clad layer;
• wherein said buffer layer comprises at least two or more buffer layer parts, and adjacent buffer layer parts are different from each other in material or composition,
• wherein said buffer layer parts comprise a material that is transparent with respect to a light with an emission peak wavelength, and
• wherein at least one of said two or more buffer layer parts alternately formed comprises an undoped layer.