US 7,608,857 B2 · Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules

Abstract

A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.

Claims4

Dependent claims

A field effect transistor, comprising:

a substrate;
a lyophobic region formed over the substrate;
and
lyophilic regions corresponding to source and drain electrodes and a channel that connects both of the source and drain electrodes to each other, said lyophilic regions being formed in the lyophobic region, said channel including a crystal having a grain size larger in a longitudinal direction of said channel than in a width direction of said channel,
wherein a width of said channel changes along the longitudinal direction of said channel, and said channel is sandwiched by the lyophobic region.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/602,404Filed 21 Nov 2006

Priority

JP 2005-33670922 Nov 2005

Published

US 2007/0117298 A124 May 2007

Granted

27 Oct 2009

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10K 71/12
Deposition of organic active material: using liquid deposition, e.g. spin coating
H10K 71/191
Deposition of organic active material: characterised by provisions for the orientation or alignment of the layer to be deposited
H10K 10/466
Insulated gate field-effect transistors [IGFETs]: lateral bottom-gate IGFETs comprising only a single gate
H10K 10/471
Characterised by the gate dielectrics: the gate dielectric comprising only organic materials

Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules

Life of this patent

Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules

Life of this patent

Abstract

Claims4