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US 7,608,854 B2Granted
Electronic device and method of making the same
AssigneeHewlett-Packard Development Company, L.P.
InventorTheodore I. Kamins
Life of this patent
Estimating the term…
Abstract
An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.
Claims20
An electronic device, comprising:
- a primary nanowire of a first conductivity type;
- a secondary nanowire of a second conductivity type crown from and extending outwardly in one direction from the primary nanowire;
- and
- a doped region of the second conductivity type diffused from and extending from the secondary nanowire into at least a portion of the primary nanowire.
1 more element
A method of making an electronic device, the method comprising:
- growing a primary nanowire having a first conductivity type;
- growing, in one direction, a secondary nanowire having a second conductivity type from a surface of the primary nanowire;
- and
- diffusing a doped region of the second conductivity type from the secondary nanowire into at least a portion of the primary nanowire.
1 more element
A junction field effect transistor, comprising:
- a primary nanowire of a first conductivity type having first and second opposed terminal ends;
- a secondary nanowire of a second conductivity type grown from and extending outwardly in one direction from the primary nanowire, the secondary nanowire having a third terminal end;
- and
- a respective electrical connection operatively connected to each of the first, second and third terminal ends.
1 more element
Dependencies are inferred from the claim text.