Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements

A method for manufacturing a non-volatile switching element, comprising:

• forming a switching film on a substrate, the switching film made of a material causing a 10 times or more change in electric resistivity with a temperature change within a range of ±80 K from a predetermined temperature;
• forming a heat conducting and electric insulating film on the switching film;
• forming a first Peltier electrode film of a first conductivity type on the heat conducting and electric insulating film so as to overlap the switching film;
• forming a second Peltier electrode film of a second conductivity type on the first Peltier electrode film so as to overlap the switching film;
• forming a Peltier element that includes the first Peltier electrode film and the second Peltier electrode film by pattering the first and second Peltier electrode films;
• performing ion implantation to the switching film located on both sides of the Peltier element, so as to form a switching portion at the portion of the switching film that is located immediately below the Peltier element and to which ions are not injected;
• and
• forming electrodes of the switching portion by performing heat treatment to alloy the portion of the switching film to which the ions are injected.